EE348 establishes a foundation for integrated electronic circuit design. The course examines the fundamental circuit cells that underpin the realization of analog electronic circuits. Most of the circuits addressed exploit metaloxidesemiconductor fieldeffect transistor (MOSFET) devices, but some attention is given to bipolar junction transistor (BJT) technology. The fundamental tools exploited to study these electronic devices and networks derive largely from the theoretic concepts and analytical strategies developed in the first circuits course, which is EE202 at USC.
EE348 Coursework Materials
 Fall 2013 Assignments

Lecture Aids
 1  Review of Fundamental Circuit Theory and Concepts
 2  PN Junction Diode Models and Circuit Applications
 3  Circuit Level Models of MOS Technology Transistors
 4  MOSFET Technology Biasing Networks
 5  Canonic Analog MOSFET Circuit Cells at Low Signal Frequencies
 6  Models and Characteristics of Integrated Bipolar Junction Transistors
 7  Biasing Circuits for Bipolar Junction Transistors
 8  Canonic Analog BJT Circuit Cells at Low Signal Frequencies
 9  Broadband Integrated Bipolar Transistor Circuits (Optional)
 10  REVIEW: Midterm Examination (Fall 2013)

Lecture Supplements
 1  Circuit and System Fundamentals
 2  Two Port and Basic Amplifier Networks
 3  PN Junction Diode
 4  Circuit Level Models and Basic Applications of MOS Transistors
 5  Bipolar Junction Transistor Models and Biasing Circuits
 6  Basic Circuit Cells of Analog MOSFET Technology
 7  Canonic Cells of Analog Bipolar Junction Transistor Technology
 8  Small Signal Models of MOS Transistors
 2013 CAD & Labs
A look at the Historical Record
 From Spring 2013
 From Spring 2012
 From Spring 2011
 From Spring 2009